2SB526 transistor equivalent, silicon pnp power transistor.
*Designed for AF high power dirver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
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*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
*Good Linearity of hFE
*Complement to Type 2SD356
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for AF high .
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