| Part number | 2SB526 |
|---|---|
| Datasheet | 2SB526-InchangeSemiconductor.pdf |
| File Size | 217.53 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·plement to Type 2SD356 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF high power dirver applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter...
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