Datasheet Details
| Part number | 2SB526 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.53 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SB526-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SB526.
| Part number | 2SB526 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.53 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SB526-InchangeSemiconductor.pdf |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Complement to Type 2SD356 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF high power dirver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -90 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.8 A 1 W 10 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA;
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