2SB526 - Silicon PNP Power Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) Good Linearity of hFE Complement to Type 2SD356 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for AF high power dirver applications.

Inchange Semiconductor

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Datasheet Details

Part number	2SB526
Manufacturer	Inchange Semiconductor
File Size	217.53 KB
Description	Silicon PNP Power Transistor
Datasheet	2SB526 Datasheet
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isc Silicon PNP Power Transistor 2SB526 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Complement to Type 2SD356 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF high power dirver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -90 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.8 A 1 W 10 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.

Published: Jun 18, 2016 |