2SB1531 transistor equivalent, silicon pnp power transistor.
*Designed for power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
C.
*High DC Current Gain-
: hFE= 5000(Min)@IC= -5A
*Low-Collector Saturation Voltage-
: VCE(sat)= -2.5V(Max.)@IC= -5A
*Complement to Type 2SD2340
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLIC.
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