2SB1217 transistor equivalent, silicon pnp power transistor.
*Designed for use in DC-DC converter, driver, solenid and
motor .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMET.
*High Collector Current -IC= -3A
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
*Good Linearity of hFE
*Low Saturation Voltage
*Complement to Type 2SD1818
*Minimum Lot-to-Lot variations for robust device
performan.
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