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2SB1203 - Silicon PNP Power Transistor

Description

High current and high fT Low collector-to-emitter saturation voltage Excellent linearity of hFE Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers,High speed inve

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isc Silicon PNP Power Transistor DESCRIPTION ·High current and high fT ·Low collector-to-emitter saturation voltage ·Excellent linearity of hFE ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -5 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -8 A 20 W 1.
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