Datasheet4U Logo Datasheet4U.com

2SB1184 - Silicon PNP Power Transistor

Description

Low VCE(sat) Small and slim package Complements the 2SD1760/2SD1864 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power dissipation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Co

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SB1184 Power Transistor Rohm
2SB1184 PNP Transistor JCET
2SB1184 Silicon PNP transistor BLUE ROCKET ELECTRONICS
2SB1184 Power transistor Kexin
2SB1184 PNP Transistor Weitron

Other Datasheets by Inchange Semiconductor

Part Number Description
2SB1182 Silicon PNP Power Transistor
2SB1100 Silicon PNP Power Transistors
2SB1144 Silicon PNP Power Transistors
2SB1152 Silicon PNP Power Transistors
2SB1153 Silicon PNP Power Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB1184 DESCRIPTION ·Low VCE(sat) ·Small and slim package ·Complements the 2SD1760/2SD1864 ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power dissipation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 1.0 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
Published: |