2SA755 transistor equivalent, power transistor.
*Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALU.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -50V(Min)
*Low Collector Saturation Voltage-
: VCE(sat)= -1.3V(Max.) @ IC= -1.5A
*Good Linearity of hFE
*Complement to Type 2SC1419
*Minimum Lot-to-Lot variations for robust device.
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