2SA505 transistor equivalent, silicon pnp power transistor.
*Designed for medium power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
.
*Collector-Emitter Breakdown Voltage-
V(BR)CEO= -50V (Min.)
*Collector-Emitter Saturation Voltage-
VCE(sat)= -0.8V (Max.)@ IC= -500mA
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*D.
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