High breakdown voltage and large current capacity
Small and slim package permitting
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
Complementary to 2SC4614
APPLICATIONS
High voltage switching application
ABSOLU
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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1770
DESCRIPTION ·High breakdown voltage and large current capacity ·Small and slim package permitting ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation ·Complementary to 2SC4614
APPLICATIONS ·High voltage switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-180
V
VCEO
Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-6 V
IC Collector Current-Continuous -1.5 A
ICM Collector Current-Peak
Collector Power Dissipation
PC
@ TC=25℃ Collector Power Dissipation
@Ta=25℃
TJ Junction Temperature
-2.5 A
15 W
1.0
150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.
2SA1770 Datasheet
