2SA1758 transistor equivalent, power transistor.
*Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
*DC Current Gain-
: hFE= 60(Min)@ (VCE= -2V, IC= -2A)
*Low Saturation Voltage-
: VCE(sat)= -0.3V(Max)@ (IC= -6A, IB= -0.3A)
*Minimum Lot-to-Lot variations for robust device
p.
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