a high hFE at low VCE(sat),which is ideal for use as a driver in DC/DC converters and actuators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO .

*This type of power transistor is developed for high-speed switching and features a high hFE at low VCE(sat),which i.

*Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min)
*High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , IC= -1A)
*Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A)
*Minimum Lot-to-Lot variations for robus.

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