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2SA1593 - Silicon PNP Power Transistor

Description

High breakdown voltage and large current capacity Fast switching speed Small and slim package permitting 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation Complementary to 2SC4135 APPLICATIONS Power supplies,

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isc Silicon PNP Power Transistor DESCRIPTION ·High breakdown voltage and large current capacity ·Fast switching speed ·Small and slim package permitting ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Complementary to 2SC4135 APPLICATIONS ·Power supplies, relay drivers,lamp drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @Ta=25℃ TJ Junction Temperature -3 A 15 W 1.0 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1593 isc website：www.
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