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2SA1513 - POWER TRANSISTOR

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) High Currrent Capacity Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -12A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed and h

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isc Silicon PNP Power Transistor 2SA1513 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High Currrent Capacity ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -12A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed and high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -15 A Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ 60 W 3.5 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.