2SA1488 - POWER TRANSISTOR

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) DC Current Gain- : hFE= 40(Min)@ IC= -1A Complement to Type 2SC3851 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications

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Datasheet Details

Part number	2SA1488
Manufacturer	Inchange Semiconductor
File Size	211.58 KB
Description	POWER TRANSISTOR
Datasheet	2SA1488 Datasheet

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= -1A ·Complement to Type 2SC3851 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -4 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -1 A 25 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA1488 isc website： www.iscsemi.