Low Collector Saturation Voltage-
: VCE(sat)= -0.4V(Max)@IC= -6A
Good Linearity of hFE
High Switching Speed
Complement to Type 2SC3709A
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for high current switching a
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isc Silicon PNP Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -0.4V(Max)@IC= -6A ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SC3709A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-12
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-2
A
30
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SA1451A
isc website： www.iscsemi.
2SA1451 Datasheet
