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2SA1389 - POWER TRANSISTOR

General Description

Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min) High Speed Switching Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High frequency power amplifiers Audio power amplifiers Switch

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isc Silicon PNP Power Transistor 2SA1389 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min) ·High Speed Switching ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High frequency power amplifiers ·Audio power amplifiers ·Switching regulators ·DC-DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -160 V -160 V -7 V -12 A 120 W 150 ℃ -55~150 ℃ isc website： www.iscsemi.