High DC Current Gain-
: hFE= 150(Min.) @ IC= -1A
High Switching Speed
Low Collector Saturation Voltage-
: VCE(sat)= -0.4V(Max)@ IC= -3A
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for high current switching applica
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isc Silicon PNP Power Transistor
2SA1387
DESCRIPTION ·High DC Current Gain-
: hFE= 150(Min.) @ IC= -1A ·High Switching Speed ·Low Collector Saturation Voltage-
: VCE(sat)= -0.4V(Max)@ IC= -3A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-5
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25℃ PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
-1
A
2 W
20
150
℃
Tstg
Storage Temperature
-55~150 ℃
isc website： www.iscsemi.
2SA1387 Datasheet
