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2SA1360 - POWER TRANSISTOR

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V (Min) Complement to Type 2SC3423 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for audio frequency amplifier applications.

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isc Silicon PNP Power Transistor 2SA1360 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V (Min) ·Complement to Type 2SC3423 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -50 mA IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -5 mA 1.2 W 5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.