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2SA1359 - POWER TRANSISTOR

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V (Min) Good Linearity of hFE Complement to Type 2SC3422 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed switching

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V (Min) ·Good Linearity of hFE ·Complement to Type 2SC3422 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -3 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 1.5 W 10 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1359 isc website： www.iscsemi.