Datasheet4U Logo Datasheet4U.com

2SA1355 - POWER TRANSISTOR

General Description

TO-220 package High DC Current Gain Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This type of power transistor is developed for high-speed switching and

Key Features

  • a high hFE at low VCE(sat),which is ideal for use as a driver in DC/DC converters and actuators.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SA1355 SILICON POWER TRANSISTOR SavantIC
2SA1350 Silicon PNP Epitaxial Transistor Hitachi Semiconductor
2SA1352 PNP/NPN Epitaxial Planar Silicon Transistors Sanyo Semicon Device
2SA1353 PNP/NPN Epitaxial Planar Silicon Transistors Sanyo Semicon Device
2SA1356 Silicon PNP Epitaxial Type Transistor Toshiba Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
2SA1352 Silicon PNP Power Transistor
2SA1357 Silicon PNP Power Transistor
2SA1358 Silicon PNP Power Transistor
2SA1359 POWER TRANSISTOR
2SA1301 Silicon PNP Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon PNP Power Transistor DESCRIPTION ·TO-220 package ·High DC Current Gain ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·This type of power transistor is developed for high-speed switching and features a high hFE at low VCE(sat),which is ideal for use as a driver in DC/DC converters and actuators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -70 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A Total Power Dissipation @TC=25℃ 30 PT W Total Power Dissipation @Ta=25℃ 3.0 TJ Junction Temperature Tstg Storage Temperature 150 ℃ -55~150 ℃ 2SA1355 isc website： www.iscsemi.