2SA1333 transistor equivalent, power transistor.
*Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
U.
*High Collector-Emitter Breakdown Voltage
*Good Linearity of hFE
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM.
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