2SA1329 - POWER TRANSISTOR

Inchange Semiconductor

General Description

Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -6A High Switching Speed Complement to Type 2SC3346 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for high current switching applications.

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2SA1329 power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SA1329
Manufacturer	Inchange Semiconductor
File Size	216.88 KB
Description	POWER TRANSISTOR
Datasheet	2SA1329 Datasheet

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isc Silicon PNP Power Transistor 2SA1329 DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -6A ·High Switching Speed ·Complement to Type 2SC3346 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.