Low Collector Saturation Voltage
Fast Switching Speed
Complement to Type 2SC3308
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
High current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon PNP Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage ·Fast Switching Speed ·Complement to Type 2SC3308 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-7.0
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ Ta=25℃ PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-8
A
1.0 W
30
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SA1308
isc website：www.iscsemi.
2SA1308 Datasheet
