Datasheet4U Logo Datasheet4U.com

2SA1304 - POWER TRANSISTOR

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) Complement to Type 2SC3296 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Power amplifier applications.

Vertical output applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SA1304 TRANSISTOR Toshiba Semiconductor
2SA1304 SILICON POWER TRANSISTOR SavantIC
2SA1300 TRANSISTOR Toshiba Semiconductor
2SA1300 PNP EPITAXIAL SILICON TRANSISTOR UTC
2SA1300 Plastic-Encapsulated Transistors TRANSYS

Other Datasheets by Inchange Semiconductor

Part Number Description
2SA1301 Silicon PNP Power Transistor
2SA1302 Silicon PNP Power Transistor
2SA1303 POWER TRANSISTOR
2SA1305 POWER TRANSISTOR
2SA1308 POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon PNP Power Transistor 2SA1304 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·Complement to Type 2SC3296 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature -150 V -150 V -5 V -1.5 A -0.5 A 2 W 20 150 ℃ -55~150 ℃ isc website： www.iscsemi.