High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -150V(Min)
Good Linearity of hFE
Complement to Type 2SC3284
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for audio and general purpose applications
ABSOLUTE MAXI
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon PNP Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3284 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-150
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-14
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-3
A
125
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SA1303
isc website： www.iscsemi.
2SA1303 Datasheet
