Low Collector Saturation Voltage-
: VCE(sat)= -2.0V(Min) @IC= -7A
Good Linearity of hFE
Complement to Type 2SC3182N
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Power amplifier applications
Recommend for 70W high fidel
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isc Silicon PNP Power Transistor
2SA1265N
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -2.0V(Min) @IC= -7A ·Good Linearity of hFE ·Complement to Type 2SC3182N ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency
amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-140
V
VCEO
Collector-Emitter Voltage
-140
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-1
A
100
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website： www.
2SA1265N Datasheet
