Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min.)
Low Collector Saturation Voltage
: VCE(sat)= -0.6V(Max.)@IC= -2A
Complement to Type 2SC3179
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for audio and gene
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon PNP Power Transistor
2SA1262
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min.) ·Low Collector Saturation Voltage
: VCE(sat)= -0.6V(Max.)@IC= -2A ·Complement to Type 2SC3179 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-60
V
VCEO Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-4
A
IB
Base Current-Peak
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-1
A
30
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.
2SA1262 Datasheet
