High switching speed
Low Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.6V(Max)@ IC= -5A
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
Complementary to 2SC3157
APPLICATIONS
High speed high voltage switchi
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isc Silicon PNP Power Transistor
2SA1261-Z
DESCRIPTION ·High switching speed ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.6V(Max)@ IC= -5A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation ·Complementary to 2SC3157
APPLICATIONS ·High speed high voltage switching industrial use ·DC/DC converters
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNI T
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
-20
A
IB
Base Current-Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-3.
2SA1261-Z Datasheet
