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2SA1217 - POWER TRANSISTOR

General Description

Collector-Emitter Breakdown Voltage- V(BR)CEO= -40V (Min) Good Linearity of hFE Complement to Type 2SC2877 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed switching ap

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isc Silicon PNP Power Transistor 2SA1217 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -40V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2877 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed switching applications. ·Suitable for output stage of 5 watts car radio and car stereo.