2SA1214 transistor equivalent, silicon pnp power transistor.
*Desinged for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALU.
*Collector-Emitter Breakdown Voltage-
V(BR)CEO= -50V (Min)
*Good Linearity of hFE
*Wide Area of Safe Operation
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Desinged for low fre.
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