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2SA1195 - POWER TRANSISTOR

General Description

Low Collector Saturation Voltage High voltage Complement to Type 2SC2483 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO

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isc Silicon PNP Power Transistor 2SA1195 DESCRIPTION ·Low Collector Saturation Voltage ·High voltage ·Complement to Type 2SC2483 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range VALUE -160 -160 -6 -1.5 2 UNIT V V V A w 10 W 175 ℃ -55~150 ℃ isc website：www.iscsemi.