2SA1173 transistor equivalent, silicon pnp power transistor.
*Power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Bas.
*High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=-140V(Min)
*Good Linearity of hFE
*Low Saturation Voltage
APPLICATIONS
*Power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collec.
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