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2SA1112 Datasheet

Manufacturer: Inchange Semiconductor
2SA1112 datasheet preview

2SA1112 Details

Part number 2SA1112
Datasheet 2SA1112_InchangeSemiconductor.pdf
File Size 220.31 KB
Manufacturer Inchange Semiconductor
Description POWER TRANSISTOR
2SA1112 page 2

2SA1112 Overview

·Collector-Emitter Breakdown Voltage- V(BR)CEO= -180V (Min) ·Good Linearity of hFE ·plement to Type 2SC2592 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency drivers and high power amplifier applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base...

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