Datasheet4U Logo Datasheet4U.com

2SA1112 - POWER TRANSISTOR

General Description

Collector-Emitter Breakdown Voltage- V(BR)CEO= -180V (Min) Good Linearity of hFE Complement to Type 2SC2592 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency drivers and high power amplifier applicat

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SA1112 (2SA1111 / 2SA1112) SILICON POWER TRANSISTOR SavantIC
2SA1110 PNP Transistor Panasonic Semiconductor
2SA1110 SILICON POWER TRANSISTOR SavantIC
2SA1111 (2SA1111 / 2SA1112) SILICON POWER TRANSISTOR SavantIC
2SA1115 PNP Transistor ETC

Other Datasheets by Inchange Semiconductor

Part Number Description
2SA1110 POWER TRANSISTOR
2SA1111 POWER TRANSISTOR
2SA1117 POWER TRANSISTOR
2SA1102 POWER TRANSISTOR
2SA1103 POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon PNP Power Transistor 2SA1112 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -180V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2592 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency drivers and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -1 A ICM Collector Current-Peak -1.5 A PC Collector Power Dissipation 20 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.