2SA1110
2SA1110 is POWER TRANSISTOR manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
V(BR)CEO= -120V (Min)
- Good Linearity of h FE
- plement to Type 2SC2590
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
VCEO Collector-Emitter Voltage
-120
VEBO
Emitter-Base Voltage
-5.0
Collector Current-Continuous
-0.5
Collector Current-Peak
-1.0
Collector Power Dissipation
Junction Temperature
℃
Tstg...
