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2SA1110 - POWER TRANSISTOR

Description

Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V (Min) Good Linearity of hFE Complement to Type 2SC2590 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for audio frequency power amplifier applications.

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isc Silicon PNP Power Transistor 2SA1110 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2590 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -0.5 A ICM Collector Current-Peak -1.0 A PC Collector Power Dissipation 1.2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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