2SA1110 transistor equivalent, power transistor.
*Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VA.
*Collector-Emitter Breakdown Voltage-
V(BR)CEO= -120V (Min)
*Good Linearity of hFE
*Complement to Type 2SC2590
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for audio f.
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