| Part number | 2SA1110 |
|---|---|
| Datasheet | 2SA1110_InchangeSemiconductor.pdf |
| File Size | 215.51 KB |
| Manufacturer | Inchange Semiconductor |
| Description | POWER TRANSISTOR |
|
|
·Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V (Min) ·Good Linearity of hFE ·plement to Type 2SC2590 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5.0 V IC...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SA1110 | PNP Transistor | Panasonic Semiconductor |
 |
2SA1110 | SILICON POWER TRANSISTOR | SavantIC |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SA1111 | POWER TRANSISTOR |
| 2SA1112 | POWER TRANSISTOR |
| 2SA1117 | POWER TRANSISTOR |
| 2SA1102 | POWER TRANSISTOR |
| 2SA1103 | POWER TRANSISTOR |
| 2SA1104 | POWER TRANSISTOR |
| 2SA1105 | POWER TRANSISTOR |
| 2SA1106 | POWER TRANSISTOR |
| 2SA1107 | POWER TRANSISTOR |
| 2SA1108 | POWER TRANSISTOR |
