2SA1068 transistor equivalent, power transistor.
*Designed for AF amplifier, high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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PARAMETER
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*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min.)
*Good Linearity of hFE
*Wide Area of Safe Operation
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for AF am.
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