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2N6761 - N-Channel MOSFET Transistor

Description

VGS Rated at ±20V Silicon Gate for fast switching speeds IDSS 、RDS(ON) ,specified at elevated temperature Low drive reqirements APPLICATIONS designed for high power ,high speed application ,such as switching applies,UPS,AC and DC motor controls , relay and high energy pulse circu

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N6761 DESCRIPTION ·VGS Rated at ±20V ·Silicon Gate for fast switching speeds ·IDSS 、RDS(ON) ,specified at elevated temperature ·Low drive reqirements APPLICATIONS designed for high power ,high speed application ,such as switching applies,UPS,AC and DC motor controls , relay and high energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 450 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=37℃ 4.0 A Total Dissipation@TC=25℃ 75 W Max.
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