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2N6609 - Silicon PNP Power Transistor

General Description

Excellent Safe Operating Area High DC Current Gain-hFE=15(Min)@IC = -8A Low Saturation Voltage- : VCE(sat)= -1.4V(Max)@ IC = -8A Complement to Type 2N3773 APPLICATIONS Designed for high power audio ,disk head positioners and other linear applications, which can also be used

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INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2N6609 DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = -8A ·Low Saturation Voltage- : VCE(sat)= -1.4V(Max)@ IC = -8A ·Complement to Type 2N3773 APPLICATIONS ·Designed for high power audio ,disk head positioners and other linear applications, which can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters.