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2N6581 - Silicon NPN Power Transistor

General Description

Excellent Safe Operating Area High Voltage,High Speed Low Saturation Voltage Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min) APPLICATIONS Off-line power supplies Switching amplifiers Inverters/Converters Motor speed control circuits Switching

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N6581 DESCRIPTION ·Excellent Safe Operating Area ·High Voltage,High Speed ·Low Saturation Voltage ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min) APPLICATIONS ·Off-line power supplies ·Switching amplifiers ·Inverters/Converters ·Motor speed control circuits ·Switching regulator ·Solenoid& relay drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 550 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9.