2N6052 transistors equivalent, silicon pnp power transistors.
*Designed for general purpose amplifier and low frequency
switching applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
.
*Built-in Base-Emitter Shunt Resistors
*High DC current gain-
hFE = 750 (Min) @ IC = -6A
*Collector-Emitter Sustaining Voltage-
VCEO(SUS)= -100V(Min)
*Complement to type 2N6059
*Minimum Lot-to-Lot variations for robust device
perf.
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