2N5930 transistors equivalent, silicon npn power transistors.
*Designed for general purpose power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
.
*DC Current Gain-
: hFE= 20-100@IC= 10A
*Low Collector Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC= 15A
APPLICATIONS
*Designed for general purpose power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
P.
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