2N5686 transistors equivalent, silicon npn power transistors.
*Designed for use in high power amplifer and switching
circuits applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYM.
*High DC Current Gain-hFE=15~60@IC = 25A
*Low Saturation Voltage-
VCE(sat)= 1.0V(Max)@ IC = 25A
*Minimum Lot-to-Lot variations for
robust device performance and reliable operation.
APPLICATIONS
*Designed for use in high power amplifer.
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