2N3583 transistor equivalent, silicon npn power transistor.
*Designed for high-speed switching and linear amplifier application for high-voltage operational amplifiers, switchi.
*Contunuous Collector Current-IC= 1A
*Power Dissipation-PD=35W @TC= 25℃
*Collector-Emitter Saturation Voltage: VCE(sat)= 5.0 V(Max)@ IC = 1A APPLICATIONS
*Designed for high-speed switching and linear amplifier application for high-vol.
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