2N3240 - Silicon NPN Power Transistor

Datasheet Summary

Description

Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested

performance and reliable operation.

amplifier applications.

Inchange Semiconductor

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Datasheet Details

Part number	2N3240
Manufacturer	Inchange Semiconductor
File Size	171.20 KB
Description	Silicon NPN Power Transistor
Datasheet	2N3240 Datasheet
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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for general purpose high power switch and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.17 ℃/W 2N3240 isc website：www.iscsemi.

Published: Nov 22, 2016 |