Datasheet Details
| Part number | 2N3240 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 171.20 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
 2N3240 Datasheet
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| Part number | 2N3240 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 171.20 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
2N3240 Datasheet
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·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for general purpose high power switch and amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.17 ℃/W 2N3240 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA;
isc Silicon NPN Power Transistor.
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