Download 20N10 Datasheet PDF
Inchange Semiconductor
20N10
20N10 is N-Channel MOSFET manufactured by Inchange Semiconductor.
FEATURES - Drain Current ID= 20A@ TC=25℃ - Drain Source Voltage- : VDSS= 100V(Min) - Static Drain-Source On-Resistance : RDS(on) = 0.12Ω(Max) - Fast Switching - APPLICATIONS - Switch mode power supply. - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 100 ±30 ID Drain Current-Continuous 20 A IDM Drain Current-Single Plused 60 A PD Total Dissipation @TC=25℃ 105 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ - THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.67 ℃/W isc website:.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdf Factory Pro .fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification - ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER...