9N60 - N-Channel MOSFET Transistor

Inchange Semiconductor

Features

Drain Current.
ID= 8.5A@ TC=25℃.
Drain Source Voltage: VDSS= 600V(Min).
Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max).
Avalanche Energy Specified.
Fast Switching.
Simple Drive Requirements.

9N60 n-channel mosfet transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	9N60
Manufacturer	Inchange Semiconductor
File Size	89.63 KB
Description	N-Channel MOSFET Transistor
Datasheet	9N60 Datasheet

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INCHANGE Semiconductor www.DataSheet4U.com isc N-Channel Mosfet Transistor isc Product Specification 9N60 ·FEATURES ·Drain Current –ID= 8.5A@ TC=25℃ ·Drain Source Voltage: VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·Designed for high efficiency switch mode power supply. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VDSS VGS ID IDM PD Tj Tstg PARAMETER Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Plused Total Dissipation @TC=25℃ Max. Operating Junction Temperature Storage Temperature VALUE 600 ±20 8.