ICE60N160B mosfet equivalent, n-channel enhancement mode mosfet.
* Low rDS(on)
* Ultra Low Gate Charge
* High dv/dt capability
* High Unclamped Inductive Switching (UIS) capability
* High peak current capability
in process in the USA and the above listed countries.
SP-60N160B-000-2a 06/05/2013
Free Datasheet http://www.datasheet.
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