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2SC1417(3DG1417)
NPN /SILICON NPN TRANSISTOR
：。/Purpose: High frequency amplifier. /Absolute maximum ratings(Ta=25℃)
Symbol Rating Unit
VCBO VCEO VEBO IC PC Tj Tstg
20 15 3.0 30 100 150 -55～150
V V V mA mW ℃ ℃
/Electrical characteristics(Ta=25℃)
Symbol
Test condition
Rating
Max Unit
Min
Typ
VCBO VCEO VEBO ICBO hFE VCE(sat) VBE fT Cob Gpe
IC=10μA IC=1.0mA IE=10μA VCB=10V VCE=6.0V IC=10mA VCE=6.0V VCE=6.0V VCB=10V VCE=6.0V RL=55 IE=0
IE=0 IB=0 IC=0 IE=0 IC=1.0mA IB=1.0mA IC=1.0mA IC=1.0mA
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20 15 3.0 1.0 40 0.6 0.7 300 1.4 7.0 F:54～80 I:132～200 G:72～108 200 0.7 0.85
V V V μA V V MHz pF dB
f=1.0MHz
IC=1.0mA RG=100 f=100MHz E:40～59 H:97～146
hFE /hFE classifications:
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2SC1417(3DG1417)
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2SC1417 Datasheet
