IXZ4DF18N50 mosfet&driver equivalent, rf power mosfet&driver.
* Isolated substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power cycling capability
* IXYS advanced Z-MOS pro.
Advantages
* Optimized for RF and high speed
* Easy to mount—no insulators needed
* High power density
*.
The IXZ4DF18N50 is a CMOS high speed high current gate driver and ZMOS MOSFET combination specifically designed Class D and E HF RF applications at up to 40MHz, as well as other applications. The IXZ4DF18N50 in pulse mode can provide 95A of peak curr.
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&DRIVER
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