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IXTY1R6N100D2 - N-Channel MOSFET

Key Features

  • Normally ON Mode.
  •  International Standard Packages.
  • Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Depletion Mode MOSFET N-Channel IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 D VDSX = ID(on) >  RDS(on) 1000V 1.6A 10 TO-252 (IXTY) G S Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C Continuous Transient TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-252 TO-263 TO-220 Maximum Ratings 1000 V 20 V 30 V 100 W - 55 ... +150 C 150 C - 55 ... +150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 0.35 g 2.50 g 3.00 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSX VGS = - 5V, ID = 250A VGS(off) VDS = 25V, ID = 100A IGSX VGS = 20V, VDS = 0V IDSX(off) VDS = VDSX, VGS= - 5V TJ = 125C RDS(on) VGS = 0V, ID = 0.