IXTP7N60PM, IXTA7N60PM Datasheet - IXYS Corporation

IXTP7N60PM Power MOSFET

Preliminary Technical Information PolarTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTA7N60PM IXTP7N60PM VDSS ID25 RDS(on) = 600V = 4A ≤ 1.1Ω Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ =150°C TC = 25°C Maximu.

IXTP7N60PM Features

* g V V Ω r e .n a ww 600 3.0 TJ = 125°C ua 300 260 1.13/10 2.5 Characteristic Values Min. Typ. Max. 5.5 1.1 - 55 +150 150 - 55 +150 ce. °C °C °C °C °C Nm/lb.in. Plastic overmolded tab for electrical isolation International standard package Avanlanche rated Low package inductance - easy to drive

IXTA7N60PM-IXYSCorporation.pdf