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IXTP10N60PM - PolarHV Power MOSFET

Features

  • z z 1.6 mm (0.062 in. ) from case for 10 s Plastic body for 10 s Mounting torque 300 260 z z 1.13/10 Nm/lb. in. 4 g Plastic overmolded tab for electrical isolation International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 100μA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ =.

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www.DataSheet4U.com Preliminary Technical Information PolarHVTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated IXTP 10N60PM VDSS ID25 RDS(on) = 600 V = 5 A ≤ 740 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C Maximum Ratings 600 600 ±30 ±40 5 30 10 20 500 10 50 -55 ... +150 150 -55 ... +150 V V V V OVERMOLDED TO-220 (IXTP...M) OUTLINE G A A A mJ mJ V/ns W °C °C °C °C °C Isolated Tab DS G = Gate S = Source D = Drain Features z z 1.6 mm (0.062 in.
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